Some of carbon tetrafluoride’s most useful attributes relate to its electric and dielectric characteristics. When subjected to strong electrical fields, CF4 decomposes to release highly reactive fluoride ions and electrons.
In addition to etching applications, carbon tetrafluoride also assists with thin film depositions in semiconductor device fabrication. When used as a precursor gas in chemical vapor deposition systems, the fluorine readily dissociates from CF4 allowing deposition of fluorine-doped silicon dioxide layers. These fluorinated oxide insulator layers have lower dielectric constants compared to standard SiO2, enabling faster electrical signals in high-performance microchips. CF4 is also used to deposit fluorocarbon polymer layers that function as anti-reflective coatings on photoresists during the lithography process. Furthermore, CF4-based plasma enhancement aids deposition of fluorine-doped silicate glass, an alternative insulator with a lower dielectric constant than pure silica.
Specifically, CF4 has an excellent dielectric strength of 89 kV/cm compared to just 30 kV/cm for air. This ability to insulate high voltages in a compact space makes CF4 ideal for gaseous dielectrics in generators, particle accelerators, and high-power RF equipment.
Additionally, CF4 displays superb arc-quenching capabilities. Upon arcing, CF4 readily dissociates to form ionized and radical species that facilitate current interruption and cooling. This allows CF4 to quickly quench arcs in circuit breakers and switchgear equipment.
Furthermore, the impressive thermal stability of CF4 keeps it gaseous and nonreactive in the presence of electrical discharges and high temperatures that would cause other compounds to decompose. All these electrical qualities make carbon tetrafluoride an indispensable component for enabling compact, efficient power systems.
Post time: Oct-16-2023